The report offers detailed coverage of Wide Bandgap (SiC/GaN) Power Devices industry and main market trends. The market research includes historical and forecast market data, demand, application details, price trends, and company shares of the leading Wide Bandgap (SiC/GaN) Power Devices by geography. The report splits the market size, by volume and value, on the basis of application type and geography.
The report forecast global Wide Bandgap (SiC/GaN) Power Devices market to grow to reach xxx Million USD in 2020 with a CAGR of xx% during the period 2020-2025.
First, this report covers the present status and the future prospects of the global Wide Bandgap (SiC/GaN) Power Devices market for 2015-2025.
And in this report, we analyze global market from 5 geographies: Asia-Pacific[China, Southeast Asia, India, Japan, Korea, Western Asia], Europe[Germany, UK, France, Italy, Russia, Spain, Netherlands, Turkey, Switzerland], North America[United States, Canada, Mexico], Middle East & Africa[GCC, North Africa, South Africa], South America[Brazil, Argentina, Columbia, Chile, Peru].
At the same time, we classify Wide Bandgap (SiC/GaN) Power Devices according to the type, application by geography. More importantly, the report includes major countries market based on the type and application.
Market Segment as follows:
By Region
Asia-Pacific[China, Southeast Asia, India, Japan, Korea, Western Asia]
Europe[Germany, UK, France, Italy, Russia, Spain, Netherlands, Turkey, Switzerland]
North America[United States, Canada, Mexico]
Middle East & Africa[GCC, North Africa, South Africa]
South America[Brazil, Argentina, Columbia, Chile, Peru]
Key Companies
Infineon
Rohm
Mitsubishi
STMicro
Fuji
Toshiba
Microsemi
United Silicon Carbide Inc
GeneSic
Efficient Power Conversion (EPC)
GaN Systems
VisIC Technologies LTD
Wolfspeed/Cree
Denso
Market by Order Type
GaN Power Devices
SiC Power Devices
Market by Application
Consumer Electronics
Automotive & Transportation
Industrial Use
Others